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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR92A NPN 5 GHz wideband transistor
Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES * High power gain * Low noise figure * Low intermodulation distortion. APPLICATIONS * RF wideband amplifiers and oscillators. DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92. PINNING PIN 1 2 3 base emitter collector DESCRIPTION
page
BFR92A
3
1 Top view Marking code: P2p.
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain Ts 95 C IC = ic = 0; VCE = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C F VO noise figure output voltage IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt; Tamb = 25 C dim = -60 dB; IC = 14 mA; VCE = 10 V; RL = 75 ; fp + fq - fr = 793.25 MHz CONDITIONS - - - - 0.35 5 14 8 2.1 150 TYP. MAX. 20 15 25 300 - - - - - - UNIT V V mA mW pF GHz dB dB dB mV
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 95 C; note 1; see Fig.3 open emitter open base open collector CONDITIONS - - - - - -65 - MIN. MAX. 20 15 2 25 300 +150 175 UNIT V V V mA mW C C
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 10 V IC = 15 mA; VCE = 10 V; see Fig.4 IE = ie = 0; VCB = 10 V; f = 1 MHz; see Fig.5 IC = ic = 0; VEB = 10 V; f = 1 MHz IC = ic = 0; VCE = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz; see Fig.6 IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt; Tamb = 25 C; see Figs 13 and 14 IC = 5 mA; VCE = 10 V; f = 2 GHz; s = opt; Tamb = 25 C; see Figs 13 and 14 VO d2 Notes output voltage second order intermodulation distortion notes 2 and 3 notes 2 and 4; see Fig.16 MIN. - 40 - - - - - - - TYP. - 90 0.6 1.2 0.35 5 14 8 2.1 PARAMETER CONDITIONS VALUE 260
BFR92A
UNIT K/W
thermal resistance from junction to soldering point Ts 95 C; note 1
MAX. 50 - - - - - - - -
UNIT nA pF pF pF GHz dB dB dB
-
3
-
dB
- -
150 -50
- -
mV dB
S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB . - 2 2 1 - S 11 1 - S 22
2. Measured on the same die in a SOT37 package (BFR90A). 3. dim = -60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 ; VSWR < 2; Tamb = 25 C Vp = VO at dim = -60 dB; fp = 795.25 MHz; Vq = VO -6 dB; fq = 803.25 MHz; Vr = VO -6 dB; fr = 805.25 MHz; measured at fp + fq - fr = 793.25 MHz. 4. IC = 14 mA; VCE = 10 V; RL = 75 ; VSWR < 2; Tamb = 25 C Vp = 60 mV at fp = 250 MHz; Vq = 60 mV at fq = 560 MHz; measured at fp + fq = 810 MHz.
2
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
handbook, full pagewidth
2.2 nF 2.2 nF VBB 33 k L2 L3 1 nF 1 nF L1 1 nF 300 DUT 75 output VCC
75 input
3.3 pF
18
0.82 pF
MBB269
L1 = L3 = 5 H choke. L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
MEA425 - 1
400 handbook, halfpage Ptot (mW) 300
handbook, halfpage
120
MCD074
h FE 80
200
40 100
0 0 50 100 150 Ts ( o C) 200
0 0 10 20 I C (mA) 30
VCE = 10 V; Tj = 25 C.
Fig.4 Fig.3 Power derating curve.
DC current gain as a function of collector current; typical values.
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MBB274
MBB275
handbook, halfpage
1
Cc (pF)
handbook, halfpage
6
0.8
fT (GHz) 4
0.6
0.4 2 0.2
0 0 5 10 15 VCB (V) 20
0 0 10 20 I C (mA) 30
IC = ic = 0; f = 1 MHz; Tj = 25 C.
VCE = 10 V; f = 500 MHz; Tamb = 25 C.
Fig.5
Collector capacitance as a function of collector-base voltage; typical values.
Fig.6
Transition frequency as a function of collector current; typical values.
handbook,30 halfpage
MBB278
handbook,30 halfpage
MBB279
gain (dB) MSG 20 G UM
gain (dB) 20 MSG
G UM 10 10
0
0
5
10
15
20
0 25 IC (mA) 0 5 10 15 25 20 I C (mA)
VCE = 10 V; f = 500 MHz. MSG = maximum stable gain; GUM = maximum unilateral power gain.
VCE = 10 V; f = 1 GHz. MSG = maximum stable gain; GUM = maximum unilateral power gain.
Fig.7
Gain as a function of collector current; typical values.
Fig.8
Gain as a function of collector current; typical values.
1997 Oct 29
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
50 handbook, halfpage gain (dB) 40 G UM 30 MSG 20
MBB280
50 handbook, halfpage gain (dB) 40 G UM
MBB281
30
MSG
20 G max
10
G max
10
0 10
102
103
f (MHz)
104
0
10
102
103
f (MHz)
104
IC = 5 mA; VCE = 10 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
IC = 15 mA; VCE = 10 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
Fig.9
Gain as a function of frequency; typical values.
Fig.10 Gain as a function of frequency; typical values.
MBB277
MBB276
handbook, halfpage
40
handbook, halfpage B
30
BS (mS) 20 F = 3.0 dB 2.5 0 1.8 1.7 20 2.0
S (mS)
F = 3.5 dB 20 3.0 10 2.5 0 2.4 10
20
40 0 20 40 60 80 G S (mS)
30 0 20 40 G S (mS) 60
IC = 4 mA; VCE = 10 V; f = 800 MHz.
IC = 14 mA; VCE = 10 V; f = 800 MHz.
Fig.11 Circles of constant noise figure; typical values.
Fig.12 Circles of constant noise figure; typical values.
1997 Oct 29
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
handbook, halfpage
4
MCD081
handbook, halfpage
4
MCD082
F (dB) 3
f = 2 GHz
F (dB) 3
I C = 15 mA 10 mA 5 mA
1 GHz 500 MHz 2 2
1
1
0 1 10 I C (mA)
10 2
0 10 2
10 3
f (MHz)
10 4
VCE = 10 V.
VCE = 10 V.
Fig.13 Minimum noise figure as a function of collector current; typical values.
Fig.14 Minimum noise figure as a function of frequency; typical values.
handbook, halfpage
-45
MBB282
d im
handbook, halfpage
-35
MBB283
(dB) -50
d2 (dB) -40
-55
-45
-60
-50
-65
-55
-70 10
20
I C (mA)
30
-60 10
20
I C (mA)
30
VCE = 10 V; VO = 150 mV (43.5 dBmV); fp + fq-fr = 793.25 MHz; Tamb = 25 C. Measured in MATV test circuit (see Fig.2).
VCE = 10 V; VO = 60 mV; fp + fq-fr = 810 MHz; Tamb = 25 C. Measured in MATV test circuit (see Fig.2).
Fig.15 Intermodulation distortion; typical values.
Fig.16 Second order intermodulation distortion; typical values.
1997 Oct 29
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 0.2 0.5 1000
1200 800 500
1
2
5
10
10
200 0.2 5 100 MHz
0.5 1 IC = 14 mA; VCE = 10 V; Zo = 50 ; Tamb = 25 C.
2
MBB270
Fig.17 Common emitter input reflection coefficient (S11); typical values.
handbook, full pagewidth
90 120 60
150
100 MHz
200
30
500 1000 180 800 1200 + 10 20 30 0 -
150
30
120 90 IC = 14 mA; VCE = 10 V; Tamb = 25 C.
60
MBB273
Fig.18 Common emitter forward transmission coefficient (S21); typical values. 1997 Oct 29 8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
handbook, full pagewidth
90 120 1200 MHz 150 typ 1000 800 500 200 180 100 0.05 0.1 0.15 0 - + 30 60
150
30
120 90 IC = 14 mA; VCE = 10 V; Tamb = 25 C.
60
MBB271
Fig.19 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 0.2 0.5 1 2 5 10
10 5
1000 800 500 1200 100 200 MHz 0.2
0.5 1 IC = 14 mA; VCE = 10 V; Zo = 50 ; Tamb = 25 C.
2
MBB272
Fig.20 Common emitter output reflection coefficient (S22); typical values.
1997 Oct 29
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFR92A
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1997 Oct 29
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFR92A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Oct 29
11
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127127/00/02/pp12
Date of release: 1997 Oct 29
Document order number:
9397 750 02766

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